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| BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Unconditionally stable Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz (VD = 3 V, ID = typ. 6.4 mA) Noise figure NF = 2.2 dB at 1.8 GHz Reverse isolation > 28 dB and return loss IN / OUT > 12 dB at 1.8 GHz 4 3 OUT ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA 420 Maximum Ratings Parameter Device current Device voltage Total power dissipation, TS = 120 C F) RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the emitter (GND) lead at the soldering point to the pcb S 1 Junction - soldering point Cascadable 50 -gain block 4 2 1 VD VPS05605 Circuit Diagram IN 1 2 GND EHA07385 Marking BLs 1, IN Pin Configuration 2, GND 3, OUT 4, VD Package SOT-343 Symbol ID VD Ptot PRFin Tj TA Tstg Value Unit 15 6 90 0 150 -65 ... 150 -65 ... 150 mA V mW dBm C RthJS 530 K/W Oct-12-1999 BGA 420 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Device current Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1 GHz 1dB compression point f = 1 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz Typical biasing configuration IP3out P-1dB RLin RLout ID |S21|2 17 15 11 25 19 17 13 28 5.4 6.7 8 mA dB typ. max. Unit S12 NF 7.5 -2.5 8 12 1.9 2 2.2 9 -1 11 16 2.2 2.3 2.5 dB dBm +VD 100 pF RF OUT 100 pF 10 nF 4 3 BGA 420 1 100 pF RF IN GND EHA07386 2 Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path. 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2 Oct-12-1999 BGA 420 Typical S-Parameters at TA = 25 C f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG Spice-model BGA 420 BGA 420-chip including parasitics +V 14 R2 13 R1 R3 OUT IN 11 C P1 VD = 3 V, Zo = 50 0.1 0.5686 0.5 0.5066 0.8 0.4404 1 0.3904 1.5 0.2841 1.8 0.2343 1.9 0.2136 2 0.2062 2.4 0.1688 3 0.1558 -8.5 -19.2 -28.7 -34.6 -50.5 -60.6 -64.1 -68.4 -89.7 -104.9 9.314 8.393 7.352 6.69 5.244 4.567 4.355 4.165 3.417 2.861 170.6 149.4 135.2 126.8 111.1 104 102 99.7 91.7 85.3 0.0268 0.0248 0.0236 0.024 0.0314 0.0378 0.0406 0.0426 0.0549 0.0682 12.7 11.7 25.6 35.9 57.2 63.5 66.1 67.2 71.4 73.1 0.2808 0.2613 0.2361 0.2144 0.1398 0.0979 0.0838 0.0689 0.0224 0.0284 -8.6 -3.8 -6.7 -9 -15 -18.2 -21.5 -22.2 -48 -147.5 T1 R1 R2 R3 C1 CP1 CP2 CP3 CP4 EHA07387 T501 14.5k 140 2.4k 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF C1 T1 C P2 12 GND C P3 C P4 3 Oct-12-1999 BGA 420 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300 fA fA A - V deg fF - V fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L2 +V C1 C2 L BO IN L BI C CB L1 14 11 BGA 420 Chip 12 C BE L EI 13 L CI L CO OUT C'-E'Diode C3 C CE L EO GND EHA07388 LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 Valid up to 3GHz Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Infineon Technologies distributor or salesoffice to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Oct-12-1999 IS = 2 fA N= 1.02 - RS = 20 nH nH nH nH nH nH fF fF fF fF fF fF nH nH BGA 420 Insertion power gain |S21|2 = f (f) VD, ID = parameter 25 Insertion power gain |S21| 2 = f (f) VD = 3 V TA = parameter 22 dB VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3,4mA dB 18 TA=-20C TA=+25C TA=+75C |S 21|2 |S 21|2 0 1 16 14 12 10 15 10 8 6 5 4 2 0 -1 10 10 GHz 10 0 -1 10 10 0 GHz 10 1 f f Noise figure NF = f (f) VD,ID = parameter 5 Noise figure NF = f (f) VD = 3V TA = parameter 3.5 dB dB VD=5V, ID=12.4mA VD=3V, ID=6.4mA TA=+75C TA=+25C TA=-20C 2.5 NF 3 NF 0 1 2.0 2 1.5 1.0 1 0.5 0 -1 10 10 GHz 10 0.0 -1 10 10 0 GHz 10 1 f f 5 Oct-12-1999 BGA 420 Intercept point at the output IP3out = f (f) VD,ID = parameter 20 dBm Intercept point at the output IP3out = f (f), VD = 3V TA = parameter 12 16 VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3.4mA dBm 10 9 IP 3out IP 3out 14 12 10 8 6 4 2 0 -1 10 0 8 7 6 5 4 3 2 1 TA=-20C TA=+25C TA=75C 10 GHz 10 1 0 -1 10 10 0 GHz 10 1 f f 6 Oct-12-1999 |
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